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 PJSMDA05-6 SERIES
HEX TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION
This 6 TVS/Zener Array family have been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5V, 12V, 15V and 24V. This TVS array offers an integrated solution to protect up to 6 data lines where the board space is a premium.
P
SPECIFICATION FEATURES
1 8 7 GND 6 GND 5
SOIC-8
350W Power Dissipation (8x20sec Waveform) Low Leakage Current, Maximum of 5A at rated voltage Very Low Clamping Voltage IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance Packaged in the Industry Standard SOIC-8
2 3 4
APPLICATIONS
RS-232C or RS-422 Communication ports GPIB/IEEE 485 Ports Portable Instrumentation
8 5
4
1
MAXIMUM RATINGS (Per Device)
Rating Peak Pulse Power (8x20sec Waveform) ESD Voltage (HBM) Operating Temperature Range Storage Temperature Range Symbol P pp V ESD TJ Tstg Value 350 >25 -50 to +125 -50 to +150 Units W kV C C
ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25C
PJSMDA05-6
Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8x20sec) Clamping Voltage (8x20sec) Off State Junction Capacitance Off State Junction Capacitance Symbol VWRM VBR IR Vcl Vcl Cj Cj I BR = 1mA VR = 5V I pp = 5A I pp = 24A
0 Vdc Bias f = 1MHz Between I/O pins and pin 6, 7 5 Vdc Bias f = 1MHz Between I/O pins and pin 6, 7
Conditions
Min
Typical
Max 5
Units V V
6 5 9.8 13 225 125
A V V pF pF
4/19/2005
Page
1
www.panjit.com
PJSMDA05-6 SERIES
ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25C
PJSMDA12-6
Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8x20sec) Clamping Voltage (8x20sec) Off State Junction Capacitance Symbol VWRM VBR IR Vcl Vcl Cj I BR = 1mA VR = 12V I pp = 5A I pp = 15A
0 Vdc Bias f = 1MHz Between I/O pins and pin 6, 7
Conditions
Min
Typical
Max 12
Units V V
P
13.3 5 20 25 100
A V V pF
PJSMDA15-6
Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8x20sec) Clamping Voltage (8x20sec) Off State Junction Capacitance Symbol VWRM VBR IR Vcl Vcl Cj I BR = 1mA VR = 15V I pp = 5A I pp = 12A
0 Vdc Bias f = 1MHz Between I/O pins and pin 6, 7
Conditions
Min
Typical
Max 15
Units V V
16.7 5 24 29 80
A V V pF
PJSMDA24-6
Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8x20sec) Clamping Voltage (8x20sec) Off State Junction Capacitance Symbol VWRM VBR IR Vcl Vcl Cj I BR = 1mA VR = 24V I pp = 5A I pp = 8A
0 Vdc Bias f = 1MHz Between I/O pins and pin 6, 7
Conditions
Min
Typical
Max 24
Units V V
26.7 5 40 44 60
A V V pF
4/19/2005
Page 2
www.panjit.com
PJSMDA05-6 SERIES
TYPICAL CHARACTERISTICS
TJ = 25C unless otherwise noted
Surge Pulse Waveform Definition
N on-R epetitive Peak Pulse Power vs Pulse Time
Pulse Waveform
Peak Pulse Power - Ppp (W)
110 100 90 80 70 60 50 40 30 20 10 0 0
1000 100 10 1 0.1 0.01 1 10 100 1000 Pulse D uration, sec
Percent of Ipp
50% of Ipp @ 20s
Rise time 10-90% - 8s
5
10
15 tim e, sec
20
25
30
Clamping Voltage vs. Peak current
Off-State Capacitance per Device - 1MHz
PJSMDAxx-6
45 40 35 30 25 20 15 10 5 0 0 5
Clamping voltage, V
24 PJS 24 MS
PJSMDAxx-6
200 180 160 140 120 100 80 60 40 20 0 0
05 PJSMS05
PJS15 MS 15 PJS12 MS 12
05 PJS 05 MS
Capacitance, pF
PJSMS1 2
12
15 5 PJSMS1
24 PJSMS24
10
15
20
25
30
1
2
3
4
5
Ipp, A (8/20sec)
Bias, Vdc
4/19/2005
Page 3
www.panjit.com
PJSMDA05-6 SERIES
TYPICAL APPLICATION EXAMPLE AND PACKAGE DIMENSIONS
RS232 Pinout
Pin Name RS232 V.24 1 2 3 4 5 6 7 8 9 CD RXD TXD DTR GND DSR RTS CTS RI CF BB BA CD AB CC CA CB CE 109 104 103 108.2 102 107 105 106 125 Dir Description Carrier Detect Receive Data Transmit Data Data Terminal Ready System Ground Data Set Ready Request to Send Clear to Send Ring Indicator
Pin2 Pin3 Pin4 Pin6 Pin7 Pin8
GND
Dimensions in inches
4/19/2005
Page 4
www.panjit.com


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